| PART |
Description |
Maker |
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| 0560-6600-DK |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
ADSL Magnetics Analog Devices
|
BEL[Bel Fuse Inc.]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LB1839 LB1839M |
Low-voltage/Low-saturation Bidirectional Constant-Voltage Regulated Motor Driver Low-voltage/Low-saturation双向恒压调控电动机驱动器
Monolithic Digital IC
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| TND301 MC100LVEP34 MC100EP016 MC100EP139 MC100EP16 |
Clock Management Design Using Low Skew and Low Jitter Devices
|
ONSEMI[ON Semiconductor]
|
| P0080SAMCLRP P0300SAMCLRP P2100SCMCLRP P0300SCMCLR |
MC Series DO-214 are low capacitance SIDACtor庐 devices designed to protect
MC Series DO-214 are low capacitance SIDACtor? devices designed to protect
|
Littelfuse
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| EP224LC7A EP220LI-12 |
High-performance, low-power erasable programmable logic devices with 8 macrocells, 7ns
High-performance, low-power erasable programmable logic devices with 8 macrocells, 12ns
|
Altera Corporation
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
| LB8632 LB8632V |
Low-Voltage/Low-Saturation Camera Motor Driver Low-Voltage/Low-Saturation相机马达驱动
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SK3000 |
Low on-resistance 4V gate drive devices.
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
